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Research Projects >> Power Electronics >> Current Research Project >>
Ultra Deep Sub Micron (UDSM) High Voltage Device and Analog Design | | Status:
Current Research Project
Research Category:
Power Electronics
Research Center:
Microelectronics Research and Communications Institute
Sponsor(s)
Boeing
Primary Researcher:
Herbert L. Hess.
Research Associate:
Kevin M. Buck.
Undergraduate Student Research Assistant:
Brendin Johnson.
Duration:
July 15, 2005 to December 23, 2008 |
The objective of this work is to produce high voltage CMOS transistors in standard low voltage technologies to enhance the digital technology for mixed-signal applications. UI\'s effort is focused on the development of high voltage devices and high voltage circuits in the Honeywell 0.15 um (S150) and the BAE Systems 0.15 um technology (RH15). This will include the design of the transistor\'s structure, the design of the test structures for each TC-CTV, testing the transistors for successful performance, and modeling the transistors for circuit simulations. It will involve the design of cells, simulation test benches and circuits, hardware test circuits, and support of radiation testing.
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